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This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The simulated energy levels are compared between each configuration in order to illustrate the origin of the charge transfer, that is, whether it is primarily from holes in the valence band or from electrons in the conduction band. The computed I-V curves for each configuration are compared with results from the literature. Several methods for better convergence are demonstrated in the setup of the various study steps.