Modeling Semiconductor Heating
Part 5 of the semiconductor modeling course starts with an overview of some of the different multiphysics coupling options available in the Semiconductor Module. We will then focus on semiconductor heating. To model nonisothermal devices, you can couple theHeat Transfer in SolidsandSemiconductorinterfaces.
Demo: Semiconductor Heating
In this video, we use thethermal analysis of a bipolar transistor tutorial modelto demonstrate how to combine theSemiconductorinterface with theHeat Transfer in Solidsinterface to add the effects of a nonuniform temperature throughout a semiconductor device. The temperature distribution throughout the device is calculated in the heat transfer interface while the heat source is provided by theSemiconductor interface. An incomplete ionization model is used for the dopant ionization in theSemiconductorinterface. Incomplete dopant ionization is a temperature-dependent process that affects the carrier concentration, and therefore the current, through the semiconductor material.
请提交与此页面相关的反馈，或点击此处联系技术支持。